Author:
Liefting J. R.,Raineri V.,Schreutelkamp R. J.,Custer J. S.,Saris F. W.
Abstract
ABSTRACTImplants of B, P, and As in Si lead to dislocation formation after 900°c annealing if a critical amount of implant damage is exceeded. However, it is possible to implant higher doses without forming dislocations if the dose is implanted in several sub-critical steps. Annealing between each step removes the (sub-critical) implant damage and dislocations do not form. Such avoidance of dislocation formation is demonstrated for 80 keV implants of B and MeV implants of B, P, and As.
Publisher
Springer Science and Business Media LLC
Cited by
5 articles.
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