Author:
Amano H.,Takeuchi T.,Sota S.,Sakai H.,Akasaki I.
Abstract
ABSTRACTStructural and optical properties of nitride based heterostructure and quantum well structure were investigated. Both AIGaN and GaInN ternary alloys are found to grow coherently on the underlying GaN layer. Compressive strain of GaInN is found to cause quantum confined Stark effect, thus affects the luminescence properties of nitride-based quantum wells.
Publisher
Springer Science and Business Media LLC
Cited by
38 articles.
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