Retention of nanostructure in aluminum oxide by very rapid sintering at 1150 °C

Abstract

Aluminum oxide powders doped with MgO (300 to 500 nm) were sintered to almost theoretical density within just 10–15 min at 1150 °C using a plasma-activated sintering process based on charging the loosely filled powders with an electric discharge prior to densification by resistance heating. The microstructure of the consolidated disks was examined by high resolution transmission electron microscopy (HREM) and electron energy loss spectroscopy (EELS) and revealed excellent grain to grain contact with virtually no grain growth and structurally clean grain boundaries.