Defect Creation by Electron Beam Irradiation in Amorphous Silicon Nitride Films Compared with That by Light Soaking

Abstract

ABSTRACTDefect creation by electron beam irradiation is compared with that by light soaking in a-Si1-xNx:H films. For the film with x=0.06, the ESR spin density increases by 20-keV electron beam irradiation without changes in the g-value. However, for the film with x=0.47, the ESR spin density increases with accompanying the decrease in the g-value from 2.0042 to 2.0034. The decrease in the g-value can be explained by increasing number of N atoms at the backbond site of the Si atom having the dangling bond. Light soakings does not change the g-value of the ESR signals of the films.