Author:
Carius R.,Fölsch J.,Lundszien D.,Houben L.,Finger F.
Abstract
ABSTRACTThin microcrystalline silicon-germanium films (μ-Sil.xGex:H) prepared by PECVD at 95 MHz have been investigated. The optical absorption of these films increases in the infrared spectral region with increasing germanium content. In addition to the shift of the indirect gap an increase of the absorption coefficient above the band edge is observed. The material shows high crystallinity and exhibits good structural quality similar to pure μ-Si:H films. The films are homogeneous on a macroscopic to a microscopic scale as confirmed by Raman spectroscopy and Electron Microscopy methods. p-i-n solar cells with pc-Sil-xGex:H i-layers have been prepared for the first time. An efficiency of η = 3.1 % under AM1.5 has been obtained for a cell with 150 nm thin i-layer.
Publisher
Springer Science and Business Media LLC
Reference16 articles.
1. 2 Knipp D. , Stiebig H. , Fölsch J. , Carius R. , Wagner H. , ibid p. 931
2. The Effect of Hydrogen on the Structure and Electrical and Optical Properties of Silicon-Germanium Alloys
3. 12 Tzolov M. , Carius R. , unpublished
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