Conductivity of the Granular Metal Films Obtained by High Dose Ion Implantation into Pmma

Abstract

AbstractThin granular metal films in polymethylmethacrylate(PMMA) have been synthesized by 40 keV Fe+, ag+ or Pb+ ions implantation with fluencies up to 6*1017 ion/cm2. the resistivity of synthesized films was measured in the temperature range from 300K. to 5K. the temperature dependence of the resistivity of PMMA implanted with ag+, Pb+ and small fluence Fe+ obeys the well known law lnR~(l/T)1/2. the samples implanted by high fluence Fe+ reveal rather a different behaviour. at low temperature (T<100K) the curves R(T) fit the formulae inR~lnT. the two mechanisms of conductivity of a granular film are considered: direct tunneling and thermally activated hopping. Combined with the morphology features of films, obtained by high fluence Fe+ implantation, the above mentioned consideration offers a satisfactory explanation of the observed temperature dependence R(T).