Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature-Reference-Cited by-同舟云学术

Dependence of the Defects Present in InAlAs/InP on the Substrate Temperature

Published:1991 Issue: Volume:240 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Peiro F.,Cornet A.,Herms A.,Morante J. R.,Georgakilas A.,Halkias G.

Abstract

ABSTRACTThe crystalline quality of InAlAs layers, grown by Molecular Beam Epitaxy on (100) InP substrates, has been investigated by Transmission Electron Microscopy in order to study the influence of InAlAs growth temperature (Tg) on the density of structural defects present in the layers. Tg was varied from 300°C up to 530°C. The density of stacking faults and threading dislocations drops dramatically as Tg increas

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference19 articles.

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2. InxGa1−xAsyP1−yalloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy

3. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy

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3. Quasiperiodic contrast inhomogeneities induced by clusters in the In0.52Al0.48As/InP interface;Applied Physics Letters;1993-05-03

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