Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates-Reference-Cited by-同舟云学术

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

Published:1995 Issue: Volume:417 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Peiró F.,Cornet A.,Ferrer J. C.,Morante J. R.,Halkias G.,Georgakilas A.

Abstract

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

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2. Applications of MBE-grown heterostructures and quantum wells in fundamental research and in advanced semiconductor devices

3. Periodic lateral structure of Al content modulations in AlGaAs grown on vicinal (111)A GaAs by molecular beam epitaxy

4. Single electron transport and current quantization in a novel quantum dot structure

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