Author:
Androulakis Ioannis,Li Hao,Malliakas Christos,Peters John A.,Liu Zhifu,Wessels Bruce W.,Song Jung-Hwan,Jin Hosub,Freeman Arthur J.,Kanatzidis Mercouri G.
Abstract
ABSTRACTWe address the issue of decreasing band-gap with increasing atomic number, inherent in semiconducting materials, by introducing a concept we call dimensional reduction. The concept leads to semiconductor compounds containing high atomic number elements and simultaneously exhibiting a large band gap and high mass density suggesting that dimensional reduction can be successfully employed in developing new γ-ray detecting materials. As an example we discuss the compound Cs2Hg6S7 that exhibits a band-gap of 1.65eV and mobility-lifetime products comparable to those of optimized Cd0.9Zn0.1Te.
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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