Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs–Based Superlattices-Reference-Cited by-同舟云学术

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Effect of Epitaxial Stresses on the Time Dynamics of Photoexcited Charge Carriers in InGaAs–Based Superlattices

Published:2019-01 Issue:1 Volume:4 Page:15-20
ISSN:2059-8521
Container-title:MRS Advances
language:en
Short-container-title:MRS Advances

Author:

Buryakov Arseniy,Khusyainov Dinar,Mishina Elena,Yachmenev Alexandr,Khabibullin Rustam,Ponomarev Dmitriy

Publisher

Springer Science and Business Media LLC

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1557/adv.2019.163.pdf

Reference15 articles.

1. B. Globisch, R. J. B. Dietz, R. B. Kohlhaas, T. Göbel, M. Schell, D. Alcer, M. Semtsiv, and W. T. Masselink, J. Appl. Phys. 121, 53102 (2017).

2. H. Roehle, R. J. B. Dietz, H. J. Hensel, J. Böttcher, H. Künzel, D. Stanze, M. Schell, and B. Sartorius, Opt. Express 18, 2296 (2010).

3. G. B. Galiev, S. S. Pushkarev, A. M. Buriakov, V. R. Bilyk, E. D. Mishina, E. A. Klimov, I. S. Vasil’evskii, and P. P. Maltsev, Semiconductors 51, 503 (2017).

4. N. P. Wells, P. M. Belden, J. R. Demers, and W. T. Lotshaw, J. Appl. Phys. 116, 73506 (2014)

5. M. Alfaro-Gomez and E. Castro-Camus, Appl. Phys. Lett. 110, 42101 (2017).

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