Microstructural Evolution of Epitaxial MgAl2O4 Thin Films Derived From Metal Nitrates and From Metal Alkoxides

Abstract

ABSTRACTMagnesium aluminate (MgAl2O4) is a potential dielectric material in Ba2YCu3O7−x (BYC) devices. In the present study, epitaxial MgAl2O4 films were deposited on (100) SrTiO3 single crystal substrates by pyrolysis of chemical precursors. Two precursors were used: one was a mixed nitrate precursor, and the other was MgAl2(OC3H7)8. Crystallization of MgAl2O4 on lattice-Matched substrates is observed at 700°C. The average surface roughness of these MgAl2O4 films is about 6Å. These chemically-derived MgAl2O4 films have demonstrated the potential for planarization by metalorganic deposition. The relationship between the processing parameters and the surface morphology of these MgAl2O4 films will be discussed.