Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Abstract

ABSTRACTA single crystal GaAs/Si heterostructure has been fabricated using the “two step” version of the traditional halogenide VPE technique. The X-ray diffraction spectroscopy, the high resolution electron microscopy observation and the Raman scattering spectroscopy have been used to analyze the structure of the GaAs epitaxial film on Si, while the X-ray photoelectron energy spectroscopy has been used to determine the chemical structure of the GaAs epilayer. The results indicate that the epilayer is a stoichiometric GaAs single crystal film.