Author:
El-Ghor M. K.,Pennycook S. J.,Zuhr R. A.
Abstract
AbstractShallow junctions were formed in single-crystal Si(100) by implantation of As at energies between 2 and 17.5 keV followed by conventional furnace annealing or by rapid thermal annealing (RTA). Cross-sectional transmission electron microscopy (XTEM) showed that defect-free shallow junctions could be formed at temperatures as low as 700 °C by RTA, with about 60% dopant activation. From a comparison of short-time and long-time annealing, it is proposed that surface image forces are responsible for the efficient removal of end-of-range (EOR) dislocation loops
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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1. End-of-range disorder influenced by inherent oxygen in silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-09