Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy-Reference-Cited by-同舟云学术

Nondestructive Compositional and Defect Characterization of CdZnTe Alloys Using Photoluminescence Spectroscopy

Published:1989 Issue: Volume:161 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Duncan W.M.,Koestner R.J.,Tregilgas J.H.,Liu H.-Y.,Chen M.-C.

Abstract

ABSTRACTResults from high resolution helium temperature photoluminescence (PL) spectroscopy have been correlated to precision lattice constant and transport measurements and to theoretical band gap versus composition behavior. It is found that low temperature PL spectra provide precise determination (+/- 0.02%) of ZnTe mole fraction as well as carrier type, relative impurity concentration and point defect properties of these substrates. In addition helium and room temperature PL results are correlated to determine the accuracy of room temperature measurements for composition determination.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference6 articles.

1. Fourier Transform Photoluminescence Analysis Of Semiconductor Materials

2. Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys

3. Donors and acceptors in tellurium compounds; The problem of doping and self-compensation

4. Optoelectronic properties of Cd1−xZnxTe films grown by molecular beam epitaxy on GaAs substrates

5. 5. Joint Committee of Powder Diffraction Standards, Swarthsmore, PA. ZnTe file 15-746 and CdTe file 15-770.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence studies of Cd0.8−xPbxZn0.2S semiconductor compounds;Journal of Luminescence;2018-05

2. On determination of Cd1–xZnxTe composition from an analysis of the 4.2, 77 and 295 K edge photoluminescence spectra;Semiconductor Physics Quantum Electronics and Optoelectronics;2017-10-09

3. Analysis of luminescence method applicability for determination of Cd1-xZnxTe composition;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-06-16

4. Correlation of resistivity with zinc content in a vapor grown (Cd,Zn)Te:Se;Applied Physics Letters;2002-12-30

5. A comparison of techniques for nondestructive composition measurements in CdZnTe substrates;Journal of Electronic Materials;1995-05