Raman Spectroscopy Study of Pulsed Laser Induced Structural Transformations in Amorphous Ge Films

Abstract

ABSTRACTStructural transformations induced in amorphous Ge films by picosecond laser pulses are studied by means of Raman spectroscopy and their dependence on parameters like the pulse fluence or the thermal conductivity of the substrate are analyzed. A correlation length model is used for studying the crystallization process, while the average bond angle distortion is used for determining the state of relaxation of the amorphous phase. Silicon and glass substrates are compared.