Injection-Level Spectroscopy of Metal Impurities in Silicon-Reference-Cited by-同舟云学术

Injection-Level Spectroscopy of Metal Impurities in Silicon

Published:1998-01 Issue: Volume:510 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Ahrenkiel R.K.,Johnston S.

Abstract

AbstractUsing a modified photoconductive eddy-current technique, excess carrier decay can be measured and used to identify the specific defect dominating recombination. As the dynamic range of the measurement system is linear over about three orders of magnitude, the injection-level spectroscopy technique can be performed in a single measurement for rapid defect identification.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference23 articles.

1. Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

2. Electronic passivation of silicon surfaces by halogens

3. Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers

4. Identification Possibility of Metallic Impurities in p‐Type Silicon by Lifetime Measurement

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