Author:
Roorda S.,Sinke W.C.,Poate J.M.,Jacobson D.C.,Fuoss P.,Dierker S.,Dennis B.S.,Spaepen F.
Abstract
ABSTRACTThermodynamic and structural properties of amorphous Si (a-Si), prepared by MeV 28Si+-ion implantation are investigated by differential scanning calorimetry, Raman spectroscopy and X-ray diffraction. The influence of thermal annealing below 500 °C on a-Si is investigated with these different probes. The observed changes result from structural relaxation. Raman spectroscopy and X-ray diffraction show that structural relaxation is accompanied by changes in the average atomic structure.
Publisher
Springer Science and Business Media LLC
Cited by
9 articles.
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