Author:
Molenbroek Edith C.,Mahan A. H.,Johnson E. J.,Gallagher A. C.
Abstract
ABSTRACTDevice quality a-Si:H has been deposited at 3 Å/s using the “hot wire” technique with 1% SiH4 in He as a source gas. To achieve this deposition rate despite the high dilution, the filament was positioned at 1–2 cm from the substrate. This short distance introduces a large non-uniformity across the substrate in the deposition rate as well as in the film properties. This experimental fact was used to analyze which factors in the deposition determine film quality. We find that radiation from the filament is not an important factor. Data taken from samples deposited at various distances, pressures and flows suggest that the film quality is influenced by radical reactions with SiH4. However, this assumption alone predicts too strong a pressure dependence. The influence of deposition rate as an additional factor can explain the results.
Publisher
Springer Science and Business Media LLC
Reference10 articles.
1. 5. The absorption region around 2000–2100 cm−1 is caused by the stretch mode of Si-H bonds. The absorption peak around 2090 cm−1 is due to Si-H stretch modes from SiH2 groups and/or from SiH groups located on internal surfaces (void surfaces). The increased presence of this peak compared to the peak at 2000 cm−1 has been found to deteriorate electronic properties in a-Si:H and its alloys. See for example
2. Deposition of device quality, low H content a-Si:H by the hot wire technique
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