Characterization of Doped Si-TiSi2Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing-Reference-Cited by-同舟云学术

Characterization of Doped Si-TiSi2Bilayers Formed by Ion Beam Mixing and Rapid Thermal Annealing

Published:1985 Issue: Volume:45 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Maex K.,de Keersmaecker R.F.,Alkemade P.F.A.

Abstract

ABSTRACTThe use of rapid thermal processing is reported for simultaneous formation of TiSi2from Ti deposited layers and activation of As or Sb implanted profiles in Si. Properties of the silicide and the doped Si are reported with emphasis on impurity redistribution and defect removal.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. 10. Seidel T. , Workshop on Rapid Thermal Annealing, North Carolina, Dec. 1984.

2. 7. Lien Chuen-Der and Nicolet Marc-A. , Workshop on refractory metal silicides for VLSI, San Juan Bautista, May 1984.

3. Erbium silicide formation using a line‐source electron beam

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