Precipitation, Phase Transformation, and Enhanced Diffusion in Ion-Implanted Silicon-Reference-Cited by-同舟云学术

Precipitation, Phase Transformation, and Enhanced Diffusion in Ion-Implanted Silicon

Published:1988 Issue: Volume:100 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Pennycook S. J.,Culbertson R. J.,Berger S. D.

Abstract

ABSTRACTZ-contrast scanning transmission electron microscopy has been used to study the connection between dopant precipitation and phase transformation in high dose In+ and Sb+ implanted Si. In the case of In, the observations confirm a heterogeneous nucleation model. Images of the precursor precipitates give the first measurement of the diffusion coefficient in amorphous Si, with an enhancement of 107 over tracer crystalline values. With Sb+ implants enhanced homogeneous nucleation is observed. The connection between these results and the transient enhanced diffusion observed in crystallized Si is discussed.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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1. The effect of temperature and doping on the segregation of In during solid‐phase‐epitaxial crystallization of Si;Journal of Applied Physics;1993-04

2. A model for the diffusion and precipitation of antimony in highly doped δ layers in silicon;Journal of Applied Physics;1992-11

3. Amorphous-to-polycrystalline phase transformations in Sn-implanted silicon;Journal of Materials Research;1990-05

4. Z-contrast stem for materials science;Ultramicroscopy;1989-06

5. Diffusion, Segregation, and Recrystallization in High-Dose Ion-Implanted Si;MRS Proceedings;1989