Amorphous to Polycrystalline Transformation in High Dose Ion Implanted Silicon-Reference-Cited by-同舟云学术

Amorphous to Polycrystalline Transformation in High Dose Ion Implanted Silicon

Published:1988 Issue: Volume:100 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Nygren E.,Mccallum J. C.,Thornton R.,Williams J. S.,Olson G. L.

Abstract

ABSTRACTThe amorphous to polycrystalline transformation of silicon implanted with high doses of In, Bi, Ga, and Sn is investigated. Each of these elements forms a low temperature eutectic with crystalline silicon and the details of the phase transformations in these systems are found to be very similar. A general model for the transformation based on the nature of the binary solutions is presented.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference13 articles.

1. Formation of stable dopant interstitials during ion implantation of silicon

2. Crystallization of Indium Implanted Amorphous Silicon

3. [5] Nygren E. et al, to be published Appl. Phys. Lett.

4. Crystallization instability at the amorphous-silicon/liquid-silicon interface

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The effect of external electric fields on silicon with superconducting gallium nano-precipitates;Journal of Applied Physics;2020-06-07

2. Effects of Additives on Crystallization in Thin Organic Films;Crystal Growth & Design;2017-08-24

3. Polycrystalline silicon produced by Ni–silicide mediated crystallization of amorphous silicon in an electric field;Journal of Applied Physics;2000-09

4. In situ analysis of aluminum enhanced crystallization of hydrogenated amorphous silicon (a-Si:H) using X-ray diffraction;Thin Solid Films;1999-11

5. Mg/GaAs(001): A highly anisotropic reaction morphology;Applied Physics Letters;1999-09-20