Sublimation Sandwich Growth of Free Standing GaN Crystals-Reference-Cited by-同舟云学术

Sublimation Sandwich Growth of Free Standing GaN Crystals

Published:1997 Issue: Volume:482 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Vodakov Yu. A.,Mokhov E. N.,Ramm M. G.,Ramm M. S.,Roenkov A. D.,Ostroumov A. G.,Wolfson A. A.,Karpov S. Yu.,Makarov Yu. N.,Jürgensen H.

Abstract

AbstractThick epitaxial layers of GaN on SiC and sapphire are grown by using the sublimation sandwich method. It is shown that growth of good quality GaN crystals with the growth rates up to 0.5 mm/hour is possible using this technique. The grown layers have been separated from the seed and free standing GaN crystals up to 15 mm size were obtained.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

1. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

2. Growth and morphology of GaN

3. 5. Yu. Vodakov A. , Mokhov E. N. and Roenkov A. D. , Patent USSR N 1136501 (1983).

4. Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor Deposition

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