Author:
Cates J. C.,Qiu G.,Haftek E.,Alexander C.,Barnard J. A.
Abstract
ABSTRACTMagnetostriction and thin film stress have been studied in high moment single layer FeTaN films deposited by high rate reactive dc magnetron sputtering. Low Magnetostriction (Magnitude less than 1 × 10-6) can be obtained over a fairly large range of nitrogen flow rates during film deposition by vacuum annealing at 500°C. After annealing at 500°C for two hours, all films were found to be in a state of tensile stress. Stress versus temperature measurements up to 400°C show film stress in as-deposited films to be highly hysteretic during the first temperature cycle reflecting the films' processing history. Stress-temperature cycles on annealed samples indicate that extremely stable films are produced in an intermediate range of nitrogen content.
Publisher
Springer Science and Business Media LLC
Reference8 articles.
1. [3] Qiu G. , Haftek E. , and Barnard J.A. , J. Appl. Phys., in press
2. Magnetic properties of Fe-Ta-N-O film with high saturation flux density
3. [4] Ishiwata N. , Takeshima Y. , Konehari T. , and Urai H. , presented at the 6th International Conference on Ferrites, in press.
4. [7] Cates J.C. , Alexander C.A. Jr ., Haftek E. , and Barnard J.A. , submitted IEEE Trans. Mag.
5. A new high-precision optical technique to measure magnetostriction of a thin magnetic film deposited on a substrate
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献