Author:
Dörnen A.,Kienle R.,Thonke K.,Stolz P.,Pensl G.,Grünebaum D.,Stolwijk N.A.
Abstract
AbstractIn the present paper, optical absorption studies on the neutral charge state of the double acceptor zinc in silicon are presented. Measurements were carried out in the mid infrared (MIR) and in the near infrared (NIR) region. The MIR absorption spectra show the excitation series of an effective-masslike hole, from which the Zn° level position is calculated to be at Ev + 319. 1 meV. A splitting of the ground state into 3 sublevels is assigned to hole-hole coupling and crystal-field splitting. Absorption spectra obtained in the NIR are interpreted in terms of an A° X-type bound exciton.
Publisher
Springer Science and Business Media LLC
Reference22 articles.
1. 16 The binding energy of this center is close to the value obtained for the electrically active center Zn(X2), observed in DLTS [12]. Therefore we accept this nomenclature for the optically active center. Additional correlations will be reported elsewhere.
2. Thallium‐doped silicon ionization and excitation levels by infrared absorption
3. Photoelectronic Properties of Zinc Impurity in Silicon
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