Parasitic side channel formation due to ion implantation isolation of GaN HEMT
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://link.springer.com/content/pdf/10.1557/s43580-022-00453-6.pdf
Reference20 articles.
1. S.J. Pearton, C.B. Vartuli, J.C. Zolper, C. Yuan, R.A. Stall, Ion implantation doping and isolation of GaN. Appl. Phys. Lett. 67, 1435 (1995). https://doi.org/10.1063/1.114518
2. S.O. Kucheyev, J.S. Williams, J. Zou, C. Jagadish, G. Li, Ion implantation into GaN. Mater. Sci. Eng. R 33, 51–107 (2001). https://doi.org/10.1016/S0168-583X(00)00672-8
3. A.N. Tallarico et al., Gate reliability of p-GaN HEMT with gate metal retraction. IEEE Trans. Electron Devices 66(11), 4829–4835 (2019). https://doi.org/10.1109/TED.2019.2938598
4. H. Yu et al., Leakage mechanism in ion implantation isolated AlGaN/GaN heterostructures. J. Appl. Phys. (2022). https://doi.org/10.1063/5.0076243
5. G. Hanington et al., P/He ion implant isolation technology for AlGaN/GaN HFETs. Electron. Lett. 34(2), 193–195 (1998). https://doi.org/10.1049/el:19980091
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