Author:
Roy P. K.,Kook T.,Kizilyalli I. C.,Nanda A. K.
Abstract
ABSTRACTThis work describes process development of various kinds of compound sidewall spacer in submicron CMOS technology to improve gate oxide (GOX) leakage characteristics. This is attained by minimizing the impact of gate-level defects (GLDs) caused by in-process particle incorporation. Transistor characteristics did not suffer from this new sidewall spacer process.
Publisher
Springer Science and Business Media LLC
Reference6 articles.
1. Synthesis of High-Quality Ultra-Thin Gate Oxides for ULSI Applications
2. 2. Cochran W. T. , Semiconductor International, 146 (May, 1991).
Cited by
1 articles.
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