Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide

Abstract

ABSTRACTSeveral paramagnetic defects are created by exposure of amorphous SiO2 to sub-band-gap light. The spectra of the dominant centers can be isolated by using their annealing, microwave power, and excitation-photonenergy dependence. The results are discussed in terms of specific models for the intrinsic defects in a-SiO2.