Author:
Shih S.,Jung K. H.,Hsieh T. Y.,Sarathy J.,Tsai C.,Li K.-H.,Campbel J. C.,Kwong D. L.
Abstract
ABSTRACTWe demonstrate for the first time that chemical etching of Si in HF-HNO3-based solution without applying bias can produce a room temperature photoluminescent porous Si layer. Scanning electron microscope studies reveal a surface morphology similar to that of the conventionally anodized porous Si. The formation mechanism of the chemically etched (CE) film can be explained by a local anodization concept. X-ray diffraction studies on the luminescent CE porous Si show a broad amorphous peak.
Publisher
Springer Science and Business Media LLC
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