Pore Formation and Propagation Mechanism in Porus Silicon-Reference-Cited by-同舟云学术

Pore Formation and Propagation Mechanism in Porus Silicon

Published:1991 Issue: Volume:256 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lehmann V.,Cerva H.,Gosele U.

Abstract

ABSTRACTThis paper presents a model of the microporous silicon formation process which is based on hole depletion due to quantum confinement in the porous structure. This model is compared with the formation of larger porous structures (meso-, macroporous) where hole depletion is generated by a space charge region.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

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