Author:
Takahashi Kenji,Suzuki Muneyasu,Oikawa Takahiro,Chen Haydn,Funakubo Hiroshi
Abstract
ABSTRACTLa-Ni-O films were deposited at deposition temperature ranging from 250 to 540°C by rf magnetron sputter deposition. The effects of deposition temperature and the following heat-treatment condition on the constituent phases and characteristics of LaNiO3 films were investigated. LaNiO3 phase was obtained at the deposition temperature of 250 and 360°C, while La-rich phase of La2NiO4 was appeared above 540°C. Crystalline phases of resultant films after the following heat-treatment strongly depended on the partial pressure of oxygen gas in ambience, i.e., in case of the heat-treatment at 800°C, diffraction peaks originated from LaNiO3 phase disappeared on XRD patterns in pure nitrogen gas ambience, while impurity peaks of NiO appeared in oxygen-excess (>50%) ambience. As a result, LaNiO3 films with high crystallinity and the same lattice parameter as the bulk one were obtained in the deposition at 360°C followed by the heat-treatment at 700°C in air.
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. 7. JCPDS 33–0710, Wustenberg, H., Hahn, Inst. fur Kristallogr., Technische Hochschule, Aachen, Germany, ICDD Grant-in-Aid, 1981.
2. Interfacial Structure and Electrical Characteristics of LaNiO3/Si Contacts
3. Structural characterization of sputter-deposited LaNiO3 thin films on Si substrate by x-ray reflectivity and diffraction
4. Low-temperature electronic properties of a normal conducting perovskite oxide (LaNiO3)
5. Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol–gel process
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