Preparation of SrTiO3 Thin Films by Ecr and Thermal Mocvd

Abstract

AbstractSrTiO3 thin films were prepared by ECR and thermal MOCVD. In thermal-CVD mode, Sr content and Ti content were at a maximum at 0.56 Torr. Results showed that SrO deposition is a surface reaction limited process between 500 and 650°C, whereas TiO2 deposition is surface reaction limited between 500 and 600 °C, and diffusion limited above 600 °C. At a low pressure of 8 mTorr, ECR oxygen plasma was found to help decompose Ti(i-OC3H7)4. In ECR-CVD mode, the deposition temperature could be lowered to 400 °C. TEM and SEM analyses showed that SrTiO3 thin films have a columnar structure. The size of the grains depends on film thickness, and their shape on film composition (Sr/Ti ). Films prepared by thermal-CVD had a lateral step coverage of 50 %. 40 nm SrTiO3 thin films (Sr/Ti = 1.0) prepared by thermal-CVD on Pt/TaOx/Si and annealed for 2 hours in O2 had a maximum dielectric constant of 139 (Cs = 31 fF/μm2 and teq = 1.1 nm) and a leakage current density of 6x10−8 A/cm2 at 1.0 V.