Author:
Arai Tomoyuki,Uekusa Shin-ichiro
Abstract
ABSTRACTYtterbium (Yb) ions were co-implanted into Al0.70Ga0.30As:Er substrates at room temperature. The photoluminescence (PL) and PL lifetime were characterized. Co-implanted Yb3+ enhanced PL intensity of Er3+-related emission. Er3+-related main peak (1538.2 nm), in addition to Yb3+ dose, was enhanced approximately twice. The energy transfers from 2F5/2 (the first excited state) → 2F7/2 (the grand excited state) of Yb3+ to 4I11/2 (the second excited state) → 4I15/2 (the grand excited state) and 4I15/2 → (the first excited state) 4I15/2 of Er3+ was observed.
Publisher
Springer Science and Business Media LLC
Cited by
1 articles.
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