Author:
Ravindra N.M.,Tong F.M.,Kosonocky W.F.,Markham J.R.,Liu S.,Kinsella K.
Abstract
ABSTRACTThe results of emissivity of (a) Si and SiO2 /Si in the temperature range of 320 to 1240 K and (b). HgCdTe at temperatures of 303 and 440 K, using Fourier Transform Infrared(FTIR) spectroscopy, in the wavelength range of 1.5 to 20 μm, have been reported here. The measurements on SiO2 /Si have been performed for oxide thickness ranging from 60 to 500 nm. These results coufled with calculations of emissivity from first principles lead us to model the wavelength dependence of emissivity. Emissivity estimates have been obtained for HgCdTe using its fundamental optical constants.
Publisher
Springer Science and Business Media LLC
Cited by
9 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Mercury cadmium telluride;Radiative Properties of Semiconductors;2017-08
2. Rapid Thermal Processing;Handbook of Semiconductor Manufacturing Technology, Second Edition;2007-07-09
3. Measurement of Effective Absorptance on Microbolometers;IEEE Transactions on Instrumentation and Measurement;2006-06
4. Emissivity measurements and modeling of silicon-related materials: An overview;International Journal of Thermophysics;2001
5. Emissivity Of Coated Silicon At Elevated Temperatures;MRS Proceedings;1998