Abstract
AbstractThe outstanding performance of the SiGe/Si heterosystem and its compatibility to the dominating Si-technology, opens perspectives for a new generation of high volume microelectronic components, just for communication markets. This paper reviews device and circuit results from experiments and simulations for SiGe HBTs and for SiGe HFETs, and compares those to device results made from competitive materials. Figures of merit considered are gains, transconductances, frequencies, noise, power, delays and bandwidths.
Publisher
Springer Science and Business Media LLC
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