Author:
Howell Robert S.,Saha Sambit K.,Hatalis Miltiadis K.
Abstract
AbstractAmong the issues associated with the fabrication of polysilicon thin film transistor (TFT) active matrix displays is the contact resistance between indium tin oxide (ITO) pixel electrodes and the aluminum data lines. We have investigated the use of Co and Ni for use as barrier layers between the Al and ITO in order to provide good ohmic contacts. For comparison, a titanium barrier layer has also been used and measured. A thin, 10 nm Co layer sufficed to provide good ohmic contacts in an ITO-Co-Al stack, while a thicker layer was required in the case of Ni in order to form a similar good ohmic contact. The contacts have been characterized using resistance measurements in conjunction with X-ray photo-electron spectroscopy (XPS) and X-ray diffraction (XRD) in order to correlate the electrical results with the physical metallurgy of the contacts.
Publisher
Springer Science and Business Media LLC
Reference5 articles.
1. 5. Saha S. , Howell R. S. and Hatalis M. K. , Mat. Res. Soc. Symp. Proc., this volume, (1998).
2. CdTe/CdS solar cells with transparent contacts
3. Low Resistive, Ohmic Contacts to Indium Tin Oxide
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献