In-Situ Electromigration Stressing in Transmission Electron Microscopy for Al-Cu Interconnects-Reference-Cited by-同舟云学术

In-Situ Electromigration Stressing in Transmission Electron Microscopy for Al-Cu Interconnects

Published:1994 Issue: Volume:356 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Shih W. C.,Greer A.L.

Abstract

AbstractUnpassivated 2.1 μm wide Al-4wt%Cu interconnects with near-bamboo grain structure, are electromigration-tested to failure in-situ in transmission electron microscopy. Early stress-induced voids stop growing and are not fatal. Hillocking is associated with precipitates, fatal voiding with copper depletion. Electromigration-induced voids form at the upstream end of inclined grain boundaries. Healing events are analysed and it is shown that open-circuit failure can occur when the proximity of grain boundaries impairs the stress-driven healing.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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