Author:
Dresselhausa M. S.,Zhang Z.,Sun X.,Ying J. Y.,Heremans J.,Dresselhaus G.,Chen G.
Abstract
AbstractThe small effective mass of Bi, high anisotropy of its Fermi surface, and the high aspect ratio (length/diameter) of Bi nanowires make this an excellent system for studying quantum confinement effects of a one-dimensional (ID) electron gas in relation to electrical conductivity, thermoelectric power, and thermal conductivity. A theoretical model based on the basic electronic band structure of bulk Bi is suitably modified to describe 1D bismuth nanowires and is used to predict the dependence of these transport properties on nanowire diameter, temperature and crystalline orientation of the bismuth nanowires. Experiments have been carried out on ultra-fine single crystal Bi nanowires (10–120 nm diameter) with a packing density as high as 7 × 1010 wires/cm2 to test the quantum confinement assumptions of the model and the occurrence of a quantum confinement-induced semimetal-to-semiconductor transition as the wire diameter becomes less than 100 nm. Prospects for the use of bismuth nanowires for thermoelectric applications are discussed.
Publisher
Springer Science and Business Media LLC
Reference22 articles.
1. [18] Huber T. E. and R. Calcao. In Sixteenth International Conference on Thermoelectrics: Proceedings, ICT '97; Dresden, Germany, edited by Armin Heinrich and Joachim Schumann, page 404, Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ 09955–1331, 1997. IEEE Catalog Number 97TH8291; ISSN 1094–2734.
2. [17] Heremans J. and Thrush C. M. , (private communication).
3. Magnetoresistance of bismuth nanowire arrays: A possible transition from one-dimensional to three-dimensional localization
4. Alfvén-Wave Propagation in Solid-Stae Plasmas. III. Quantum Oscillations of the Fermi Surface of Bismuth
5. Bismuth quantum-wire arrays fabricated by a vacuum melting and pressure injection process
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献