Author:
Radzimski Z. J.,Yokoyama S.,Ishibashi K.,Hirose M.
Abstract
AbstractMedium-energy ion spectroscopy using a conventional ion implanter has been developed to study the properties of semiconductor subsurface regions. The system is equipped with solid state detector and operaties with He+ ion energy up to 200 keV. We have tested the system performance for various applications, such as, silicon diffusion through a thin Au layer, a low dose, low energy As implantion and damage of silicon surface caused by plasma treatment.
Publisher
Springer Science and Business Media LLC