Author:
Taylor D.J.,Jones R.E.,Lii Y.T.,Zurcher P.,Chu P.Y.,Gillespie S.J.
Abstract
AbstractHighlights and solutions to some of the challenges involved in integrating SrBi2Ta2O9 (SBT) capacitors with Pt electrodes on silicon wafers for non-volatile memory applications are discussed. These include the diffusion of Bi through the Pt bottom electrode during firing, capacitor patterning, and process damage that results from hydrogen containing atmospheres.Next, studies of the temperature dependence of many of the important electrical properties of SBT are presented. These include the remanent polarization (2Pr), the non-volatile polarization (Pnv), and the coercive field (Ec) all of which are studied as functions of the pulse amplitude; fatigue resistance of 2Pr and Pnv; the retention; the small signal capacitance versus voltage behavior; and the current versus voltage behavior. These studies demonstrate that SBT looks very promising for ferroelectric non-volatile memories over the consumer application range (0 to 70 °C).
Publisher
Springer Science and Business Media LLC
Reference20 articles.
1. 17. Taylor D.J. , Jones R.E. Jr .,, Zurcher P. , Jiang B. , Chu P.Y. , Lii Y.T. and Gillespie S.J. , Appl. Phys. Lett. (to be published).
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3. Ferroelectric Memories
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