Abstract
ABSTRACTA review is given of the current status of amorphous Si(a-Si) and related alloys prepared by photo-CVD. Preparation techniques and film quality of the following materials will be reviewed;
•undoped a-Si films,•highly conductive n-type and p-type μc-Si films, a-SiGe films.•a-SiC films, superlattice structures.Finally, the present status of a-Si solar cell performance prepared by photo-CVD will be introduced and the merit of photo-CVD will be discussed.
Publisher
Springer Science and Business Media LLC
Reference30 articles.
1. [27] Tanaka T.T. , Kim W.Y. , Konagai M. and Takahashi K. ,Tech.Digest of Int'l PVSEC-l(1984)563
2. [5] Sichanugrist P. , Konagai M. and Takahashi K. ,Extended Abs. of the 17th Conference on Solid State Devices and Materials, Tokyo(1985)p.103
3. Amorphous-Silicon Solar Cells Prepared by a Combined Photochemical-Plasma CVD Technique
4. [18] Cvetanovic R.J. Progress in Reaction Kinetics, vol. 2, The Macmillan Company(1964)
5. Silicon Thin-Film Formation by Direct Photochemical Decomposition of Disilane
Cited by
19 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献