The Evolution of Chem-Mechanical Planarization: From Aberrant to Prosaic-Reference-Cited by-同舟云学术

The Evolution of Chem-Mechanical Planarization: From Aberrant to Prosaic

Published:1994 Issue: Volume:337 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Renteln Peter,Coniff John

Abstract

ABSTRACTChem-Mechanical Planarization (CMP) is a rapidly growing technology in the semiconductor fabrication repertoire. Initially offering an answer to the need for truly global planarization brought about by optical steppers' ever decreasing Depth of Focus (DOF), CMP may come to stay more for its impressive ability to actually decrease defect density, as well as potentially reduce the contact resistance of Tungsten plugs. But even the use of CMP at this post-etchback step first requires a manufacturable oxide planarization CMP technology, the single most difficult challenge of all the different CMP applications. In this presentation, We will describe various remaining mysteries of some of the more fundamental questions involving the process in addition to some present manufacturing issues.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

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