Effects of Rapid Thermal Processing on Thermal Oxides of Silicon-Reference-Cited by-同舟云学术

Effects of Rapid Thermal Processing on Thermal Oxides of Silicon

Published:1986 Issue: Volume:71 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Lee S.K.,Shih D.K.,Kwong D.L.,Alvi N.S.,Wu N.R.,Lee H.S.

Abstract

AbstractThe effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in MOS devices have been studied. MOS capacitors have been analyzed by capacitance-voltage (C-V), current-voltage (I-V), and constant current stress techniques. MOSFET degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at 1100°C for 5 seconds.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference5 articles.

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3. [1]. See, for example, Symposium B on RTP, Material Research Society 1985 Fall Meeting.

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1. Noise and electrical characterisation of e-beam rapid isothermally annealed n-channel MOSFETS;Semiconductor Science and Technology;1989-05-01

2. Rapid Thermal Process Integration;Reduced Thermal Processing for ULSI;1989

3. Rapid thermal anneal induced effects in polycrystalline silicon gate structures;Applied Physics Letters;1987-10-19