Si implants into Preamorphised GaAs

Abstract

ABSTRACTDual implants of (P+ + Si+) through thin Si3N4, layers have been studied. The phosphorus dose has a marked effect on the electrical properties of 6 × 1012 Si+ cm−2. Optimum electrical activation occurred at a phosphorus dose well below that required to produce an amorphous layer and depended on whether a furnace or a rapid thermal anneal was performed. Good control over the tail of the electron concentration profile was obtained for doses of phosphorus in the range 6 × 1012 to 1 × 1014 ions cm−2.