Influence of Structure and Chemistry on Piezoelectric Properties of Pzt in a Mems Power Generation Application

Abstract

ABSTRACTPZT films between 1 and 3 μm thick were grown using solution deposition techniques to study the effects of crystal structure, orientation, chemistry and PZT/PZT crystallization interfaces on the piezoelectric output of these films. By varying the chemistry of the film from Zr-rich to Ti-rich the film orientation increased towards {h00}. PZT with 60 wt% Ti exhibited tetragonality and produced greater electrical output at a given strain than the rhombohedral films with concentrations less than 50 wt% Ti. Multiple steps of solution deposition left identifiable PZT/PZT interfaces within the film. TEM, FESEM, and Auger spectroscopy were used to characterize these interfaces, which form upon crystallization of the amorphous PZT film. Internal PZT interfaces are associated with both structural defects (voids) as well as chemical variations such as Pb deficiencies.