Author:
Jesson D. E.,Pennycook S. J.,Baribeau J. -M.
Abstract
AbstractA new strategy for atomic resolution compositional mapping at semiconductor interfaces is presented. Images can be interpreted directly to within 10% to give column-by-column compositional information with a sensitivity approaching Rutherford scattering cross sections. We apply the method to obtain the first atomic resolution images of interfacial ordering in ultrathin (SimGen)p superlattices and attribute the results to growth on (2 × 1) and (1 × 2) reconstructed surfaces.
Publisher
Springer Science and Business Media LLC
Reference13 articles.
1. 4. Jesson D. E. , Pennycook S. J. , and Chisholm M. F. , in Atomic Scale Structure of Interfaces, ed. by Bringans R. D. , Feenstra R. M. , and Gibson J. M. , Materials Research Society, Pittsburgh, Pennsylvania (in press).
2. Chemical Mapping of Semiconductor Interfaces at Near-Atomic Resolution
3. Observation of Order-Disorder Transitions in Strained-Semiconductor Systems
4. Chemical ordering and boundary structure in strained-layer Si-Ge superlattices
Cited by
10 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献