Positron Annihilation and X-Ray Photoelectron Spectroscopy Analyses of TiN/Si and TiN/SiO2/Si Films

Abstract

ABSTRACTWe have characterized TiN/Si and TiN/SiO2/Si structures by utilizing the variable energy positron beam spectroscopy (VEPBS) and x-ray photoelectron spectroscopy (XPS). Thin films of TiN were grown on SiO2/Si and Si by chemical vapor deposition and sputtering. Details of the electronic structure, microstructural defects, and interface are probed by implanting monoenergetic positrons at varying depths and analyzing the resulting positron-electron annihilation gamma rays. This analysis provides results for the positron diffusion length in different parts of the layered structure. Being sensitive to the presence of lattice defects, the positron diffusion length can be used to assess the quality of the film. The XPS measurements provide details about the elemental composition and interface in these materials.