Author:
Chen L.J.,Lur W.,Chen J.F.,Lee T.L.,Liang J.M.
Abstract
ABSTRACTAn overview of silicide formation by rapid thermal processing is presented. Recent progresses on device applications, phase formation, growth kinetics, thermal stability, epitaxial growth, formation of metastable phase, vacancy ordering in rare-earth silicides and Ti-based shallow junctions involving rapid thermal processing are used as examples to highlight the applications of rapid thermal processing in connection with silicide formation.
Publisher
Springer Science and Business Media LLC
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