Author:
Hodgson R. T.,Deline V.,Mader S. M.,Morehead F. F.,Gelpey J.
Abstract
ABSTRACTSilicon implanted with arsenic or boron has been annealed with a 100kW argon arc lamp turned on for a few seconds until the wafer temperature was in the 850–1250°C temperature range. The differences in defect behavior between such rapid annealing and furnace annealing is pointed out, and the dopant diffusion is measured. Aside from an initial movement of the boron atoms left in interstitial positions after the implant, diffusion of the boron and arsenic is consistent with standard diffusion models.
Publisher
Springer Science and Business Media LLC
Reference7 articles.
1. Annealing and Residual Damage
2. 3. Hodgson R. T. , Baglin J. E. E. , Michel A. E. , Mader S. and Gelpey J. C. , ibid, pp. 355.
3. 4. Kalish R. , Sedgwick T. O. , Mader S. and Shatas S. , to be published in Appl. Phys. Lett. (1984).
4. Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon
Cited by
12 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献