Impurity Diffusion During RTA

Abstract

ABSTRACTEnhanced dopant diffusion during RTA depends upon whether the following physical phenomena occur individually or in combination: (1) amorphization of the Si, (2) damage-induced dislocation formation, (3) damage annealing, (4) self-interstitial trapping, (5) solubility enhancement. RTA of B in crystalline or preamorphized Si presents significantly different environments for enhanced diffusion. In preamorphized Si, enhanced B diffusion is modeled as increased B solubility following SPE. In addition, a different intrinsic diffusivity is observed which corresponds to B diffusion in preamorphized Si. Anomalous diffusion of B and As from high dose implants can be modeled with the same mechanism -- self-interstitial trapping following SPE.