Author:
Saito S.,Shishiguchi S.,Mineji A.,Matsuda T.
Abstract
ABSTRACTIn accordance with decrease of device size, ultra shallow junctions are required for realizing superior device performance. Enhanced diffusion caused by implantation is a crucial factor to realize ultra shallow junctions. Not only implant but also RTA conditions are key factors to suppress enhanced diffusion. In this paper, process conditions to minimize enhanced diffusion are discussed. Implant ion species, energy, dose and beam current parameters are investigated for implantation and temperature, time and ramping rate parameters are investigated for RTA. Important result is that optimization of not only implant but also RTA conditions should be carried out in order to fabricate ultra shallow junctions.
Publisher
Springer Science and Business Media LLC
Reference17 articles.
1. Low energy BF2 implantation for the suppression of B penetration
2. [5] Sung J.M. , Lu C.-Y. , Chen M.L and Hillenius S.J. , IEDM technical Digest, 1989, p447.
3. [1] Shishiguchi S. , Mineji A. , Hayashi T. , and Saito S. , VLSI Symposium Technical Digest, 1997, p89.
4. Studies of point defect/dislocation loop interaction processes in silicon
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献